1. Product Scientific Research and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral latticework, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying remarkable atomic bond stamina.
The Si– C bond, with a bond energy of approximately 318 kJ/mol, is amongst the strongest in architectural ceramics, giving exceptional thermal security, hardness, and resistance to chemical assault.
This durable covalent network leads to a material with a melting point surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical toughness and creep resistance at temperatures over 1400 ° C, where several metals and standard ceramics start to soften or weaken.
Its low coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal cycling without tragic splitting, a crucial attribute for crucible efficiency.
These inherent properties come from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise a highly stable and largely packed crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are generally made from sintered or reaction-bonded SiC powders, with microstructure playing a decisive duty in toughness and thermal shock resistance.
Sintered SiC crucibles are generated through solid-state or liquid-phase sintering at temperatures over 2000 ° C, often with boron or carbon additives to boost densification and grain boundary communication.
This process yields a totally thick, fine-grained framework with marginal porosity (
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